The ZXMN4A06GTA is a N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) discrete semiconductor component. It is designed for use in power management applications and provides high performance and reliability.
Key features of the ZXMN4A06GTA include a low on-state resistance of 0.9 ohms, a continuous drain current of 5.3A, and a pulsed drain current of 20A. It has a 60V drain-source voltage rating, making it suitable for a wide range of applications.
The ZXMN4A06GTA is housed in a compact and rugged DPAK (TO-252) package, making it easy to mount on a PCB. It is designed to operate in harsh environments and can withstand high temperatures and humidity levels.
Overall, the ZXMN4A06GTA is a reliable and high-performance discrete semiconductor component that is ideal for power management applications where high efficiency and reliability are required