The ZXMN10A08E6TA is a N-channel enhancement mode MOSFET with a maximum drain-source voltage of 80V and a continuous drain current of 1.76A. This discrete semiconductor component is specifically designed for use in power management applications where high efficiency and fast switching speeds are required.
Key features of the ZXMN10A08E6TA include a low threshold voltage of 1.8V, a low on-resistance of 0.4 ohms, and a fast switching speed of less than 25ns. This MOSFET also has a high avalanche energy rating of 52mJ, making it suitable for rugged and reliable operation in harsh environments.
The ZXMN10A08E6TA is housed in a compact and efficient SOT-23 package, making it easy to integrate into a wide range of electronic devices. Overall, this discrete semiconductor component offers a cost-effective solution for power management applications that require high efficiency, fast switching speeds, and reliable performance
