The DMN2019UTS-13 is a discrete semiconductor component that is a dual N-channel enhancement mode MOSFET transistor. It is designed for use in a wide range of applications, including power management, motor control, and LED lighting.
Key features of the DMN2019UTS-13 include a low on-state resistance of 0.035 ohms, a maximum drain-source voltage of 30V, and a continuous drain current of 2.1A. It has a fast switching speed and a low gate threshold voltage, making it suitable for high frequency operation.
The DMN2019UTS-13 is housed in a compact SOT-23 package, which makes it easy to integrate into a variety of circuit designs. It also has a high operating temperature range of -55°C to 150°C, ensuring reliable performance in harsh environmental conditions.
Overall, the DMN2019UTS-13 is a versatile and reliable discrete semiconductor component that offers high performance and efficiency in a compact package, making it ideal for a wide range of applications
