The DMN2004K-7 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) discrete semiconductor component. It is designed for high-speed switching applications in various electronic devices. This MOSFET has a maximum drain-source voltage of 20V and a continuous drain current of 2.2A. The DMN2004K-7 features a low on-state resistance of 370mΩ, which allows for efficient power management and reduced heat dissipation. With a gate threshold voltage of 0.7-1.5V, this component is compatible with a wide range of logic levels. Additionally, the DMN2004K-7 has a fast switching speed and enhanced ESD protection, making it suitable for use in automotive, industrial, and consumer electronics applications. Its small and compact package size further enhances its versatility and ease of integration into various circuit designs
