B1100-13-F

Name: B1100-13-F
Brand: Diodes Incorporated
SKU: 42129B-DS
Price: 0.0747 USD
Availability: InStock

100V 790mV@1A 1A SMA(DO-214AC) Schottky Barrier Diodes (SBD)

1 : $0.0747

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Dasenic Part Number

42129B-DS

Manufacturer

Diodes Incorporated

Manufacturer Part #

B1100-13-F

Customer Reference

Datasheet

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Sample

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25108 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

SMA(DO-214AC)

Quantity

Unit Price

$ 0.0747

Total

$ 0.07

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Diodes Incorporated
Discrete Semiconductor Devices	Schottky Diodes
Product Status	Active
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Technology	Schottky
Supplier Device Package	SMA
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified ( Io)	1A
Voltage - Forward ( Vf) ( Max) @ If	790 mV @ 1 A
Current - Reverse Leakage @ Vr	500 µA @ 100 V
Capacitance @ Vr, F	80pF @ 4V, 1MHz
Voltage - D C Reverse ( Vr) ( Max)	100 V
Operating Temperature - Junction	-65°C ~ 150°C
Base Product Number	B1100
Packaging	Tape & Reel (TR)
Packaging	Cut Tape (CT)
Packaging	Dasenic-Reel®

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
REACH Status	REACH Affected
US ECCN	EAR99
HTS US	8541.10.0080
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The B1100-13-F is a discrete Schottky diode from Vishay Semiconductor. It is designed for use in various applications such as power supplies, converters, and battery chargers. This component features a low forward voltage drop, high current capability, and fast switching speeds. The B1100-13-F has a maximum forward current of 1A and a forward voltage drop of 0.53V at a forward current of 1A. It has a peak reverse voltage of 100V and a maximum reverse leakage current of 0.5uA. This diode comes in a SMA package with a compact form factor, making it ideal for space-constrained applications. Its high reliability and performance make it a popular choice for engineers looking for a high-quality discrete semiconductor component