AOD4189

Name: AOD4189
Brand: Alpha &Omega Semiconductor
SKU: 7962CE-DS
Price: 0.3119 USD
Availability: InStock

MOSFET P-CH 40V 40A TO252

1 : $0.3119

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Dasenic Part Number

7962CE-DS

Manufacturer

Alpha &Omega Semiconductor

Manufacturer Part #

AOD4189

Customer Reference

Datasheet

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Sample

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16296 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity

Unit Price

$ 0.3119

Total

$ 0.31

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Alpha &Omega Semiconductor
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-252 (DPAK)
Power Dissipation ( Max)	2.5W (Ta), 62.5W (Tc)
F E T Type	P-Channel
Drain to Source Voltage ( Vdss)	40 V
Current - Continuous Drain ( Id) @ 25° C	40A (Tc)
Rds On ( Max) @ Id, Vgs	22mOhm @ 12A, 10V
Vgs(th) ( Max) @ Id	3V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	41 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	1870 pF @ 20 V
Drive Voltage ( Max Rds On, Min Rds On)	4.5V, 10V
Vgs ( Max)	±20V

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The AOD4189 is a high-power N-channel MOSFET transistor packaged in a TO-252-3 form factor. It is designed for use in high-current applications such as power management and motor control. The AOD4189 has a maximum drain-source voltage of 30V and a continuous drain current of 70A, making it suitable for a wide range of industrial and automotive applications. With a low on-resistance of 4.5mΩ, the AOD4189 offers high efficiency and low power dissipation. It also features a fast switching speed and low gate charge, allowing for high-speed operation. Overall, the AOD4189 is a reliable and high-performance discrete semiconductor component suitable for demanding power applications